201 power f-mos fets unit: mm 2SK3044 silicon n-channel power f-mos fet features avalanche energy capacity guaranteed: eas > 130mj v gss = 30v guaranteed high-speed switching: t f = 50ns no secondary breakdown applications contactless relay diving circuit for a solenoid driving circuit for a motor control equipment switching power supply electrical characteristics (t c = 25c) parameter drain to source cut-off current gate to source leakage current drain to source breakdown voltage gate threshold voltage drain to source on-resistance forward transfer admittance diode forward voltage input capacitance (common source) output capacitance (common source) reverse transfer capacitance (common source) turn-on time (delay time) rise time turn-off time (delay time) fall time symbol i dss i gss v dss v th r ds(on) | y fs | v dsf c iss c oss c rss t d(on) t r t d(off) t f conditions v ds = 360v, v gs = 0 v gs = 30v, v ds = 0 i d = 1ma, v gs = 0 v ds = 25v, i d = 1ma v gs = 10v, i d = 4a v ds = 25v, i d = 4a i dr = 8a, v gs = 0 v ds = 20v, v gs = 0, f = 1mhz v gs = 10v, i d = 4a v dd = 150v, r l = 37.5 ? min 450 2 3 typ 0.56 5 1300 160 70 25 45 150 50 max 0.1 1 5 0.75 ? 1.7 unit ma a v v ? s v pf pf pf ns ns ns ns absolute maximum ratings (t c = 25c) parameter drain to source breakdown voltage gate to source voltage drain current avalanche energy capacity allowable power dissipation channel temperature storage temperature dc pulse t c = 25c ta = 25c symbol v dss v gss i d i dp eas * p d t ch t stg ratings 450 30 7 14 100 40 2 150 ? 55 to +150 unit v v a a mj w c c * l = 4.1mh, i l = 8a, v dd = 50v, 1 pulse 1: gate 2: drain 3: source to-220d-a1 package 1.4 0.2 1.6 0.2 0.8 0.1 0.55 0.15 2.54 0.30 5.08 0.50 123 2.6 0.1 2.9 0.2 4.6 0.2 3.2 0.1 3.0 0.5 9.9 0.3 15.0 0.5 13.7 0.2 4.2 0.2 solder dip
202 power f-mos fets 2SK3044 area of safe operation (aso) p d ? ta eas ? t j i d ? v ds i d ? v gs v th ? t c r ds(on) ? i d r ds(on) ? i d | y fs | ? i d 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 non repetitive pulse t c =25 ? c t=10 s 100 s dc 1ms 10ms 100ms drain to source voltage v ds ( v ) drain current i d ( a ) 0 160 40 120 80 140 20 100 60 0 60 50 40 30 20 10 (1) t c =ta (2) without heat sink (1) (2) ambient temperature ta ( ? c ) allowable power dissipation p d ( w ) 25 175 150 125 50 100 75 0 100 80 60 40 20 junction temperature t j ( ? c ) avalanche energy capacity eas ( mj ) 0 102030405060 0 16 12 4 10 14 8 2 6 v gs =15v 10v 6v 7v 5.5v 50w 5v t c =25 ? c drain to source voltage v ds ( v ) drain current i d ( a ) 012 10 8 26 4 0 10 8 6 4 2 t c =0 ? c 150 ? c 100 ? c 25 ? c v ds =25v gate to source voltage v gs ( v ) drain current i d ( a ) 0 25 50 75 100 125 150 0 6 5 4 3 2 1 v ds =25v i d =1ma case temperature t c ( ? c ) gate threshold voltage v th ( v ) 010 8 26 4 0 2.4 2.0 1.6 1.2 0.8 0.4 v gs =10v t c =150 ? c 100 ? c 25 ? c 0 ? c drain current i d ( a ) drain to source on-resistance r ds(on) ( ? ) 010 8 26 4 0 2.4 2.0 1.6 1.2 0.8 0.4 t c =25 ? c v gs =10v 15v drain current i d ( a ) drain to source on-resistance r ds(on) ( ? ) 0246810 0 12 10 8 6 4 2 v ds =25v t c =25 ? c drain current i d ( a ) forward transfer admittance |y fs | ( s )
203 power f-mos fets 2SK3044 c iss , c oss , c rss ? v ds v ds , v gs ? q g t d(on) , t r , t f , t d(off) ? i d r th(t) ? t 0 50 100 150 200 250 1 10 100 1000 3 30 300 3000 10000 c iss c oss c rss f=1mhz t c =25 ? c drain to source voltage v ds ( v ) input capacitance ( common source ) , output capacitance ( common source ) , reverse transfer capacitance ( common source ) c iss ,c oss ,c rss ( pf ) 0 102030405060 0 50 100 150 200 250 300 350 400 0 4 8 12 16 2 6 10 14 i d =8a t c =25 ? c v gs v ds gate to source voltage v gs ( v ) gate charge amount q g ( nc ) drain to source voltage v ds ( v ) 0246810 0 50 100 150 200 250 300 t d(off) t f t d(on) t r v dd =150v v gs =10v t c =25 ? c drain current i d ( a ) switching time t d(on) ,t r ,t f ,t d(off) ( ns ) 10 4 10 10 3 10 1 10 2 110 3 10 2 10 4 10 2 10 1 1 10 10 2 (1) without heat sink (2) with a 100 100 2mm al heat sink (1) (2) time t ( s ) thermal resistance r th (t) ( ? c/w )
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